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PSMN102-200Y

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PSMN102-200Y Image

The PSMN102-200Y from Nexperia is a MOSFET with Continous Drain Current 13.6 to 21.5 A, Drain Source Resistance 86 to 245 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 4.4 V. Tags: Surface Mount. More details for PSMN102-200Y can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN102-200Y
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 30.7 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    13.6 to 21.5 A
  • Drain Source Resistance
    86 to 245 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 4.4 V
  • Gate Charge
    30.7 nC
  • Power Dissipation
    113 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    LFPAK56
  • Applications
    Class D amplifier, DC-to-DC converters, Motion control, Switched-mode power supplies

Technical Documents
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