PSMN1R3-30YL

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PSMN1R3-30YL Image

The PSMN1R3-30YL from Nexperia is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 1.04 to 2.8 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.15 V. Tags: Surface Mount. More details for PSMN1R3-30YL can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN1R3-30YL
  • Manufacturer
    Nexperia
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    1.04 to 2.8 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.15 V
  • Gate Charge
    46.6 to 100 nC
  • Power Dissipation
    121 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    LFPAK56E
  • Applications
    DC-to-DC converters, Lithium-ion battery protection, Load switching, Motor control, Server power supplies

Technical Documents

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