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PSMN1R7-60BS

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PSMN1R7-60BS Image

The PSMN1R7-60BS from Nexperia is a MOSFET with Continous Drain Current 120 A, Drain Source Resistance 1.66 to 4.5 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 4.6 V. Tags: Surface Mount. More details for PSMN1R7-60BS can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN1R7-60BS
  • Manufacturer
    Nexperia
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    120 A
  • Drain Source Resistance
    1.66 to 4.5 Milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 4.6 V
  • Gate Charge
    129 to 137 nC
  • Power Dissipation
    306 W
  • Temperature operating range
    -55 to 175 Degree C
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    DC-to-DC converters, Lithium-ion battery protection, Load switching, Motor control, Server power supplies

Technical Documents
View details on the manufacturer's website
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