The PSMN1R9-80SSE from Nexperia is an N-channel Enhancement Mode MOSFET that is ideal for hot-swap, load switch, soft start e-fuse, telecommunication, and computing systems based on 48 V backplane/supply rail applications. It has a drain-source breakdown voltage of over 80 V, a gate-source voltage of ±20 V, and a drain-source on-resistance of 3 milli-ohms. This power MOSFET has a continuous drain current of up to 286 A and power dissipation of less than 340 W. It offers a very low drain-source on-resistance value for low I2R conduction losses and has a fully optimized safe operating area (SOA) for superior linear mode operation. This RoHS-compliant MOSFET complements the latest hot-swap controllers that are robust enough to withstand substantial in-rush currents during turn-on and delivers optimum efficiency and reliability when turned fully ON. It is available in a surface-mount package that measures 8.1 x 8.1 x 1.7 mm.
