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PSMN2R0-55YLH

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PSMN2R0-55YLH Image

The PSMN2R0-55YLH from Nexperia is a MOSFET with Continous Drain Current 181 to 200 A, Drain Source Resistance 1.63 to 4.9 Milliohm, Drain Source Breakdown Voltage 55 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Surface Mount. More details for PSMN2R0-55YLH can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN2R0-55YLH
  • Manufacturer
    Nexperia
  • Description
    55 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    181 to 200 A
  • Drain Source Resistance
    1.63 to 4.9 Milliohm
  • Drain Source Breakdown Voltage
    55 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    54 to 184 nC
  • Power Dissipation
    333 W
  • Temperature operating range
    -55 to 175 Degree C
  • Package Type
    Surface Mount
  • Package
    LFPAK56E
  • Applications
    Brushless DC motor control, Synchronous rectifier in high-power AC-to-DC applications, e.g. server power supplies, Battery protection and Battery Management Systems (BMS), Load switch, 10 cell lithium-ion battery

Technical Documents
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