The PSMN2R3-100SSE from Nexperia is an N-Channel Enhancement Mode MOSFET that is ideal for load switch, hot swap, soft start, telecommunication systems based on 48 V backplane/supply rail, and e-Fuse applications. It has a drain-source breakdown voltage of over 100 V, a gate threshold voltage of 2.6 V, and a drain-source on-resistance of 1.8 milli-ohms. This MOSFET has a continuous drain current of up to 255 A and a power dissipation of less than 341 W. It is based on Nexperia’s application-specific MOSFETs (ASFETs) that are suited for hot-swap and soft-start operations. This N-Channel MOSFET complements the latest hot-swap controllers – sufficiently robust to withstand substantial in-rush currents during turn-ON, low drain-source on-resistance to minimize I2R losses, and delivers optimum efficiency when the MOSFET is fully turned ON. It also provides a safe operating area (SOA) performance in a high-reliability copper-clip package. This MOSFET is available in a surface-mount package that measures 8 x 8 x 1.6 mm.
