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PSMN2R6-100SSF

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PSMN2R6-100SSF Image

The PSMN2R6-100SSF from Nexperia is a MOSFET with Continous Drain Current 170 to 200 A, Drain Source Resistance 2.08 to 5.9 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for PSMN2R6-100SSF can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN2R6-100SSF
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 70 to 129 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    170 to 200 A
  • Drain Source Resistance
    2.08 to 5.9 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    70 to 129 nC
  • Power Dissipation
    341 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    LFPAK88
  • Applications
    Synchronous rectifier in AC-DC and DC-DC, Primary side switch in DC-DC, BLDC motor control, Full-bridge and half-bridge applications, Battery protection

Technical Documents
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