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PSMN3R9-100YSF

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PSMN3R9-100YSF Image

The PSMN3R9-100YSF from Nexperia is a MOSFET with Continous Drain Current 120 A, Drain Source Resistance 3.3 to 6.9 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for PSMN3R9-100YSF can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN3R9-100YSF
  • Manufacturer
    Nexperia
  • Description
    100 V N-Channel Enhancement MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    5.3 x 6.2 x 1.1 mm
  • Number of Channels
    Single
  • Continous Drain Current
    120 A
  • Drain Source Resistance
    3.3 to 6.9 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    40 to 120 nC
  • Power Dissipation
    294 W
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LFPAK56E
  • Applications
    BLDC motor control, flyback and resonant topologies, full-bridge and half-bridge applications, Primary side switch, synchronous rectification, USB-PD adapters

Technical Documents
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