1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Nexperia
  6. PSMN4R0-60YS

PSMN4R0-60YS

Download Datasheet Request Quote

Note : Your request will be directed to Nexperia.

PSMN4R0-60YS Image

The PSMN4R0-60YS from Nexperia is a MOSFET with Continous Drain Current 74 to 100 A, Drain Source Resistance 3.6 to 12 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for PSMN4R0-60YS can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PSMN4R0-60YS
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 47.5 to 56 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    74 to 100 A
  • Drain Source Resistance
    3.6 to 12 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    47.5 to 56 nC
  • Power Dissipation
    130 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    LFPAK56
  • Applications
    DC-to-DC converters, Lithium-ion battery protection, Load switching, Motor control, Server power supplies, Telecom power

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products