PSMN4R2-30MLD

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PSMN4R2-30MLD Image

The PSMN4R2-30MLD from Nexperia is a MOSFET with Continous Drain Current 65 to 70 A, Drain Source Resistance 3.45 to 9.4 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Surface Mount. More details for PSMN4R2-30MLD can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN4R2-30MLD
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 9.2 to 29.3 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    65 to 70 A
  • Drain Source Resistance
    3.45 to 9.4 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    9.2 to 29.3 nC
  • Power Dissipation
    65 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    LFPAK33
  • Applications
    On-board DC-DC solutions for server and telecommunications, Secondary-side synchronous rectification in telecommunication applications, Voltage regulator modules (VRM), Point-of-Load (POL) modules, Power delivery for V-core, ASIC, DDR, GPU, VGA and system

Technical Documents

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