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PSMN4R2-60PL

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PSMN4R2-60PL Image

The PSMN4R2-60PL from Nexperia is a MOSFET with Continous Drain Current 124 to 130 A, Drain Source Resistance 3.17 to 8.6 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.5 to 2.45 V. Tags: Through Hole. More details for PSMN4R2-60PL can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN4R2-60PL
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 72 to 151 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    124 to 130 A
  • Drain Source Resistance
    3.17 to 8.6 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.5 to 2.45 V
  • Gate Charge
    72 to 151 nC
  • Power Dissipation
    263 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Applications
    Battery-powered tools, Load switching, Motor control, Uninterruptible power supplies

Technical Documents
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