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PSMN4R3-100PS

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PSMN4R3-100PS Image

The PSMN4R3-100PS from Nexperia is a MOSFET with Continous Drain Current 120 A, Drain Source Resistance 3.7 to 12 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 4.6 V. Tags: Through Hole. More details for PSMN4R3-100PS can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN4R3-100PS
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 140 to 170 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    120 A
  • Drain Source Resistance
    3.7 to 12 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 4.6 V
  • Gate Charge
    140 to 170 nC
  • Power Dissipation
    338 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Applications
    DC-to-DC converters, Load switiching, Motor control, Server power supplies

Technical Documents
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