1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Nexperia
  6. PSMN4R8-100PSE

PSMN4R8-100PSE

Download Datasheet Request Quote

Note : Your request will be directed to Nexperia.

PSMN4R8-100PSE Image

The PSMN4R8-100PSE from Nexperia is a MOSFET with Continous Drain Current 120 A, Drain Source Resistance 4.3 to 13.5 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 4.6 V. Tags: Through Hole. More details for PSMN4R8-100PSE can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PSMN4R8-100PSE
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 166.9 to 278 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    120 A
  • Drain Source Resistance
    4.3 to 13.5 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 4.6 V
  • Gate Charge
    166.9 to 278 nC
  • Power Dissipation
    405 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Applications
    Electronic fuse, Hot-swap / Soft-start, Uninterruptible power supplies, Motor control

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products