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PSMN6R3-120PS

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PSMN6R3-120PS Image

The PSMN6R3-120PS from Nexperia is a MOSFET with Continous Drain Current 70 to 70 A, Drain Source Resistance 4 to 19.4 milliohm, Drain Source Breakdown Voltage 120 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 4.6 V. Tags: Through Hole. More details for PSMN6R3-120PS can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN6R3-120PS
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 207.1 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    70 to 70 A
  • Drain Source Resistance
    4 to 19.4 milliohm
  • Drain Source Breakdown Voltage
    120 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 4.6 V
  • Gate Charge
    207.1 nC
  • Power Dissipation
    405 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Applications
    AC-to-DC power supply, Synchronous rectification, Motor control

Technical Documents
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