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PSMN6R9-100YSF

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PSMN6R9-100YSF Image

The PSMN6R9-100YSF from Nexperia is a MOSFET with Continous Drain Current 88 to 90 A, Drain Source Resistance 5.6 to 15.4 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for PSMN6R9-100YSF can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN6R9-100YSF
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 20.9 to 50.3 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    88 to 90 A
  • Drain Source Resistance
    5.6 to 15.4 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    20.9 to 50.3 nC
  • Power Dissipation
    238 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    LFPAK56
  • Applications
    Synchronous rectifier in AC-DC and DC-DC, Primary side switch in DC-DC, BLDC motor control, USB-PD adapters, Full-bridge and half-bridge applications, Flyback and resonant topologies

Technical Documents
View details on the manufacturer's website
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