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PSMN7R6-100BSE

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PSMN7R6-100BSE Image

The PSMN7R6-100BSE from Nexperia is a MOSFET with Continous Drain Current 75 A, Drain Source Resistance 6.5 to 20.5 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for PSMN7R6-100BSE can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN7R6-100BSE
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 110 to 128 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    75 A
  • Drain Source Resistance
    6.5 to 20.5 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    110 to 128 nC
  • Power Dissipation
    296 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    Electronic fuse, Hot swap, Load switch, Soft start

Technical Documents
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