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PSMN8R2-80YS

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PSMN8R2-80YS Image

The PSMN8R2-80YS from Nexperia is a MOSFET with Continous Drain Current 57 to 82 A, Drain Source Resistance 5.8 to 20 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 4.6 V. Tags: Surface Mount. More details for PSMN8R2-80YS can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN8R2-80YS
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 48 to 55 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    57 to 82 A
  • Drain Source Resistance
    5.8 to 20 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 4.6 V
  • Gate Charge
    48 to 55 nC
  • Power Dissipation
    130 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Aerospace, Military, Medical
  • Package Type
    Surface Mount
  • Package
    LFPAK56
  • Applications
    DC-to-DC converters, Lithium-ion battery protection, Load switching, Motor control, Server power supplies

Technical Documents
View details on the manufacturer's website
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