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PSMN8R5-100PS

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PSMN8R5-100PS Image

The PSMN8R5-100PS from Nexperia is a MOSFET with Continous Drain Current 75 to 100 A, Drain Source Resistance 6.4 to 22.6 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.4 to 3.6 V. Tags: Through Hole. More details for PSMN8R5-100PS can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN8R5-100PS
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 111 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    75 to 100 A
  • Drain Source Resistance
    6.4 to 22.6 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.4 to 3.6 V
  • Gate Charge
    111 nC
  • Power Dissipation
    263 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Applications
    AC-to-DC power supply equipment, Motor control, Server power supplies, Synchronous rectification

Technical Documents
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