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PSMN8R9-100BSE

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PSMN8R9-100BSE Image

The PSMN8R9-100BSE from Nexperia is a MOSFET with Continous Drain Current 76 to 108 A, Drain Source Resistance 8 to 27 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 4.6 V. Tags: Surface Mount. More details for PSMN8R9-100BSE can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN8R9-100BSE
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 45 to 160 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    76 to 108 A
  • Drain Source Resistance
    8 to 27 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 4.6 V
  • Gate Charge
    45 to 160 nC
  • Power Dissipation
    296 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    Hot swap, Load switch, Soft start, E-fuse, Telecommunication systems

Technical Documents
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