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PSMN9R8-100YSF

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PSMN9R8-100YSF Image

The PSMN9R8-100YSF from Nexperia is a MOSFET with Continous Drain Current 43 to 61 A, Drain Source Resistance 7.3 to 22.2 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for PSMN9R8-100YSF can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN9R8-100YSF
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 18 to 34.6 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    43 to 61 A
  • Drain Source Resistance
    7.3 to 22.2 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    18 to 34.6 nC
  • Power Dissipation
    147 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    LFPAK56
  • Applications
    Synchronous rectifier in AC-DC and DC-DC, Primary side switch in DC-DC, BLDC motor control, USB-PD adapters, Full-bridge and half-bridge applications, Flyback and resonant topologies

Technical Documents
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