The PSMNR70-40SSH from Nexperia is an N-Channel Enhancement Mode MOSFET. It has a gate-source voltage of ± 20 V and a gate threshold voltage of 2.4-3.6 V. This MOSFET has a drain-source breakdown voltage of 40 V and a drain-source resistance of up to 0.7 milli-ohm. It has a power dissipation of 375 W and a continuous drain current of up to 425 A. It is fabricated using Nexperia’s “SchottkyPlus” technology and delivers high efficiency and low spiking performance. This avalanche-rated MOSFET is integrated with a Schottky diode and has a low leakage current. It offers superfast switching with soft body-diode recovery for low-spiking and ringing. This MOSFET is available as a surface-mount package that measures 8 x 8 mm and is ideal for brushless DC motor control, battery protection, eFuse & load switch, hot-swap/in-rush current management, and synchronous rectifier in high-power AC-DC applications such as server power supplies.