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PSMP061-60YE

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PSMP061-60YE Image

The PSMP061-60YE from Nexperia is a MOSFET with Continous Drain Current -25 A, Drain Source Resistance 48 to 130 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to -1.5 V. Tags: Surface Mount. More details for PSMP061-60YE can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMP061-60YE
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 20 to 30 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -25 A
  • Drain Source Resistance
    48 to 130 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to -1.5 V
  • Gate Charge
    20 to 30 nC
  • Power Dissipation
    66 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    LFPAK56
  • Applications
    Reverse battery protection, Power management, High-side load switch, Motor drive

Technical Documents
View details on the manufacturer's website
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