1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. NoMIS Power
  6. NCD3T400MP330S

NCD3T400MP330S

Download Datasheet Request Quote

Note : Your request will be directed to NoMIS Power.

NCD3T400MP330S Image

The NCD3T400MP330S from NoMIS Power is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 400 milli-ohm, Drain Source Breakdown Voltage 3300 V, Gate Source Voltage -10 to 25 V, Gate Source Threshold Voltage 2.0 to 3.0 V. Tags: Surface Mount. More details for NCD3T400MP330S can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NCD3T400MP330S
  • Manufacturer
    NoMIS Power
  • Description
    3300 V, 20 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    400 milli-ohm
  • Drain Source Breakdown Voltage
    3300 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Source Threshold Voltage
    2.0 to 3.0 V
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-227
  • Applications
    Solid-state circuit breakers, Matrix (AC/AC) Converters, Current Source Converters, Energy Storage Systems, Solid-state power Controllers, Uninterruptible Power Supplies

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products