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FCAB21A60L

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The FCAB21A60L from Nuvoton Technology is a MOSFET with Continous Drain Current 8.5 to 20.0 A, Drain Source Resistance 2.40 to 6.95 milli-ohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 1.30 to 2.35 V. Tags: Chip. More details for FCAB21A60L can be seen below.

Product Specifications

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Product Details

  • Part Number
    FCAB21A60L
  • Manufacturer
    Nuvoton Technology
  • Description
    12 V, 8.5 to 20.0 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    8.5 to 20.0 A
  • Drain Source Resistance
    2.40 to 6.95 milli-ohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    1.30 to 2.35 V
  • Gate Charge
    21 nC
  • Switching Speed
    70 to 160 ns
  • Power Dissipation
    3.0 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Package
    CSP
  • Note
    Input Capacitance :- 3100 pF

Technical Documents
View details on the manufacturer's website
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