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FCAB22710L

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The FCAB22710L from Nuvoton Technology is a MOSFET with Continous Drain Current 6.1 to 15.0 A, Drain Source Resistance 3.9 to 12.5 milli-ohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 1.30 to 2.35 V. Tags: Chip. More details for FCAB22710L can be seen below.

Product Specifications

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Product Details

  • Part Number
    FCAB22710L
  • Manufacturer
    Nuvoton Technology
  • Description
    12 V, 6.1 to 15.0 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    6.1 to 15.0 A
  • Drain Source Resistance
    3.9 to 12.5 milli-ohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    1.30 to 2.35 V
  • Gate Charge
    17.5 nC
  • Switching Speed
    62 to 240 ns
  • Power Dissipation
    3.0 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Package
    CSP
  • Note
    Input Capacitance :- 2320 pF

Technical Documents
View details on the manufacturer's website
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