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KFCAB21770L

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The KFCAB21770L from Nuvoton Technology is a MOSFET with Continous Drain Current 14.5 to 35.4 A, Drain Source Resistance 1.30 to 5.30 milli-ohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.35 to 1.40 V. Tags: Chip. More details for KFCAB21770L can be seen below.

Product Specifications

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Product Details

  • Part Number
    KFCAB21770L
  • Manufacturer
    Nuvoton Technology
  • Description
    12 V, 14.5 to 35.4 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    14.5 to 35.4 A
  • Drain Source Resistance
    1.30 to 5.30 milli-ohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.35 to 1.40 V
  • Gate Charge
    42 nC
  • Switching Speed
    1.8 to 5.9 µs
  • Power Dissipation
    3.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Package
    CSP
  • Note
    Input Capacitance :- 4930 pF

Technical Documents
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