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KFCAB21C30L

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The KFCAB21C30L from Nuvoton Technology is a MOSFET with Continous Drain Current 9.8 to 24.0 A, Drain Source Resistance 1.85 to 5.15 milli-ohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 1.30 to 2.35 V. Tags: Chip. More details for KFCAB21C30L can be seen below.

Product Specifications

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Product Details

  • Part Number
    KFCAB21C30L
  • Manufacturer
    Nuvoton Technology
  • Description
    12 V, 9.8 to 24.0 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    9.8 to 24.0 A
  • Drain Source Resistance
    1.85 to 5.15 milli-ohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    1.30 to 2.35 V
  • Gate Charge
    30 nC
  • Switching Speed
    85 to 220 ns
  • Power Dissipation
    3.0 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Package
    CSP
  • Note
    Input Capacitance :- 4100 pF

Technical Documents
View details on the manufacturer's website
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