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KFJ4B01100L

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The KFJ4B01100L from Nuvoton Technology is a MOSFET with Continous Drain Current -2.2 to -4.1 A, Drain Source Resistance 57 to 290 milli-ohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.3 to -1.0 V. Tags: Chip. More details for KFJ4B01100L can be seen below.

Product Specifications

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Product Details

  • Part Number
    KFJ4B01100L
  • Manufacturer
    Nuvoton Technology
  • Description
    -12 V, -2.2 to -4.1 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.2 to -4.1 A
  • Drain Source Resistance
    57 to 290 milli-ohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.3 to -1.0 V
  • Gate Charge
    7.0 nC
  • Switching Speed
    8 to 59 ns
  • Power Dissipation
    0.36 to 1.3 W
  • Temperature operating range
    -40 to 85 Degree C
  • Industry
    Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Package
    CSP
  • Note
    Input Capacitance :- 459 pF

Technical Documents
View details on the manufacturer's website
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