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KFJ4B0622ZL

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The KFJ4B0622ZL from Nuvoton Technology is a MOSFET with Continous Drain Current -2.4 to -4.9 A, Drain Source Resistance 39 to 100 milli-ohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 10 V, Gate Source Threshold Voltage -1.0 to -3.0 V. Tags: Chip. More details for KFJ4B0622ZL can be seen below.

Product Specifications

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Product Details

  • Part Number
    KFJ4B0622ZL
  • Manufacturer
    Nuvoton Technology
  • Description
    -60 V, -2.4 to -4.9 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.4 to -4.9 A
  • Drain Source Resistance
    39 to 100 milli-ohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 10 V
  • Gate Source Threshold Voltage
    -1.0 to -3.0 V
  • Gate Charge
    21 nC
  • Switching Speed
    20 to 220 ns
  • Power Dissipation
    0.45 to 1.79 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Package
    CSP
  • Note
    Input Capacitance :- 3000 pF

Technical Documents
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