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BVSS138LT1G

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The BVSS138LT1G from onsemi is a MOSFET with Continous Drain Current 0.2 A, Drain Source Resistance 3500 to 10000 milli-ohm, Drain Source Breakdown Voltage 50 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.85 to 1.5 V. Tags: Surface Mount. More details for BVSS138LT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    BVSS138LT1G
  • Manufacturer
    onsemi
  • Description
    50 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.2 A
  • Drain Source Resistance
    3500 to 10000 milli-ohm
  • Drain Source Breakdown Voltage
    50 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.85 to 1.5 V
  • Power Dissipation
    0.225 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3
  • Applications
    Low power switch, Digital switch, Any low current automotive application

Technical Documents
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