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BVSS84LT1G

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The BVSS84LT1G from onsemi is a MOSFET with Continous Drain Current -0.13 A, Drain Source Resistance 4700 to 10000 milli-ohm, Drain Source Breakdown Voltage -50 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2 to -0.9 V. Tags: Surface Mount. More details for BVSS84LT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    BVSS84LT1G
  • Manufacturer
    onsemi
  • Description
    -50 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.13 A
  • Drain Source Resistance
    4700 to 10000 milli-ohm
  • Drain Source Breakdown Voltage
    -50 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2 to -0.9 V
  • Gate Charge
    2.2 nC
  • Power Dissipation
    0.225 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3
  • Applications
    DC-DC converters, Power Management in portable and battery-powered products such as computers, printers, cellular and cordless telephone, Load Switching

Technical Documents
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