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ECH8308

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ECH8308 Image

The ECH8308 from onsemi is a MOSFET with Continous Drain Current -10 A, Drain Source Resistance 9.2 to 33 milliohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 1.3 V. Tags: Surface Mount. More details for ECH8308 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ECH8308
  • Manufacturer
    onsemi
  • Description
    1.3 V P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -10 A
  • Drain Source Resistance
    9.2 to 33 milliohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    1.3 V
  • Gate Charge
    26 nC
  • Power Dissipation
    1.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-28 FL / ECH-8

Technical Documents
View details on the manufacturer's website
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