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ECH8308-TL-H

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The ECH8308-TL-H from onsemi is a MOSFET with Continous Drain Current -10 A, Drain Source Resistance 9.2 to 33 milli-ohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -1.3 to -0.4 V. Tags: Surface Mount. More details for ECH8308-TL-H can be seen below.

Product Specifications

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Product Details

  • Part Number
    ECH8308-TL-H
  • Manufacturer
    onsemi
  • Description
    -12 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -10 A
  • Drain Source Resistance
    9.2 to 33 milli-ohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -1.3 to -0.4 V
  • Gate Charge
    26 nC
  • Power Dissipation
    1.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    ECH8

Technical Documents
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