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ECH8660-TL-H

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The ECH8660-TL-H from onsemi is a MOSFET with Continous Drain Current -4.5 to 4.5 A, Drain Source Resistance 45 to 155 milli-ohm, Drain Source Breakdown Voltage -30 to 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.3 to 2.6 V. Tags: Surface Mount. More details for ECH8660-TL-H can be seen below.

Product Specifications

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Product Details

  • Part Number
    ECH8660-TL-H
  • Manufacturer
    onsemi
  • Description
    -30 to 30 V, P-Channel Enhancement Mode, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode, N-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel, N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -4.5 to 4.5 A
  • Drain Source Resistance
    45 to 155 milli-ohm
  • Drain Source Breakdown Voltage
    -30 to 30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.3 to 2.6 V
  • Gate Charge
    4.4 to 10 nC
  • Power Dissipation
    1.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    ECH8

Technical Documents
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