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ECH8697R-TL-W

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The ECH8697R-TL-W from onsemi is a MOSFET with Continous Drain Current 10 A, Drain Source Resistance 7.4 to 17.5 milli-ohm, Drain Source Breakdown Voltage 24 V, Gate Source Voltage -12.5 to 12.5 V, Gate Source Threshold Voltage 0.5 to 1.3 V. Tags: Surface Mount. More details for ECH8697R-TL-W can be seen below.

Product Specifications

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Product Details

  • Part Number
    ECH8697R-TL-W
  • Manufacturer
    onsemi
  • Description
    24 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    10 A
  • Drain Source Resistance
    7.4 to 17.5 milli-ohm
  • Drain Source Breakdown Voltage
    24 V
  • Gate Source Voltage
    -12.5 to 12.5 V
  • Gate Source Threshold Voltage
    0.5 to 1.3 V
  • Gate Charge
    6 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-28 FL
  • Applications
    1-2 cells Lithium-ion Battery Charging and Discharging Switch

Technical Documents
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