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EFC3J018NUZTDG

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The EFC3J018NUZTDG from onsemi is a MOSFET with Continous Drain Current 23 A, Drain Source Resistance 2.5 to 9 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.3 V. Tags: Wafer. More details for EFC3J018NUZTDG can be seen below.

Product Specifications

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Product Details

  • Part Number
    EFC3J018NUZTDG
  • Manufacturer
    onsemi
  • Description
    20 V, N-Channel Depletion Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    23 A
  • Drain Source Resistance
    2.5 to 9 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.3 V
  • Gate Charge
    75 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Wafer
  • Package
    WLCSP-6
  • Applications
    1-2 cells Lithium-ion Battery Charging and Discharging Switch

Technical Documents
View details on the manufacturer's website
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