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EFC4C002NLTDG

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The EFC4C002NLTDG from onsemi is a MOSFET with Continous Drain Current 30 A, Drain Source Resistance 1.5 to 5.1 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.2 V. Tags: Wafer. More details for EFC4C002NLTDG can be seen below.

Product Specifications

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Product Details

  • Part Number
    EFC4C002NLTDG
  • Manufacturer
    onsemi
  • Description
    30 V, N-Channel Depletion Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    30 A
  • Drain Source Resistance
    1.5 to 5.1 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.2 V
  • Gate Charge
    45 nC
  • Power Dissipation
    2.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Wafer
  • Package
    WLCSP-8
  • Applications
    3-Cells Lithium-ion Battery Charging and Discharging Switch

Technical Documents
View details on the manufacturer's website
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