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EFC8811R-TF

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The EFC8811R-TF from onsemi is a MOSFET with Continous Drain Current 27 A, Drain Source Resistance 1.8 to 6.3 milli-ohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.5 to 1.3 V. Tags: Chip. More details for EFC8811R-TF can be seen below.

Product Specifications

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Product Details

  • Part Number
    EFC8811R-TF
  • Manufacturer
    onsemi
  • Description
    12 V, N-Channel Depletion Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    27 A
  • Drain Source Resistance
    1.8 to 6.3 milli-ohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.5 to 1.3 V
  • Gate Charge
    100 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Package
    CSP-6
  • Applications
    1-Cell Lithium-ion Battery Charging and Discharging Switch

Technical Documents
View details on the manufacturer's website
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