The FCA20N60F from onsemi is an N-Channel MOSFET. It has a drain-source breakdown voltage of over 600 V, a gate threshold voltage of up to 5 V, and a drain-source on-resistance of less than 190 milli-ohms. This avalanche-tested MOSFET is designed using onsemi's first-generation SUPERFET technology which employs charge balance technique to achieve low on-resistance and reduced gate charge. It integrates a body diode and minimizes conduction loss, providing superior switching performance and dv/dt rate for switching power applications. This RoHS-compliant MOSFET is available in a through-hole package that measures 36.26 x 15.40 x 4.60 mm and is ideal for LCD/LED/PDP TV, AC-DC power supply, and solar inverter applications.