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FCB110N65F

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FCB110N65F Image

The FCB110N65F from onsemi is a MOSFET with Continous Drain Current 35 A, Drain Source Resistance 110 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 5 V. Tags: Surface Mount. More details for FCB110N65F can be seen below.

Product Specifications

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Product Details

  • Part Number
    FCB110N65F
  • Manufacturer
    onsemi
  • Description
    5 V N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    35 A
  • Drain Source Resistance
    110 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    5 V
  • Gate Charge
    145 nC
  • Power Dissipation
    357 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK-3 / TO-263-2
  • Applications
    Telecom / Server Power Supplies, Solar Inverter, Computing Power Supplies, FPD TV Power/Lighting

Technical Documents
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