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FCD900N60Z

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The FCD900N60Z from onsemi is a MOSFET with Continous Drain Current 4.5 A, Drain Source Resistance 900 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3.5 V. Tags: Surface Mount. More details for FCD900N60Z can be seen below.

Product Specifications

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Product Details

  • Part Number
    FCD900N60Z
  • Manufacturer
    onsemi
  • Description
    3.5 V N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.5 A
  • Drain Source Resistance
    900 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3.5 V
  • Gate Charge
    17 nC
  • Power Dissipation
    52 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK-3 / TO-252-3
  • Applications
    Solar Inverter, LCD/ LED TV moniter, Charger

Technical Documents
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