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FCH041N65EF

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FCH041N65EF Image

The FCH041N65EF from onsemi is a MOSFET with Continous Drain Current 76 A, Drain Source Resistance 41 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 5 V. Tags: Through Hole. More details for FCH041N65EF can be seen below.

Product Specifications

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Product Details

  • Part Number
    FCH041N65EF
  • Manufacturer
    onsemi
  • Description
    5 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    76 A
  • Drain Source Resistance
    41 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    5 V
  • Gate Charge
    229 to 298 nC
  • Power Dissipation
    595 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-3
  • Applications
    LCD/LED/PDP TV Lighting, Solar Inverter, AC-DC Power Supply

Technical Documents
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