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FCMT299N60

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The FCMT299N60 from onsemi is a MOSFET with Continous Drain Current 12 A, Drain Source Resistance 299 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3.5 V. Tags: Surface Mount. More details for FCMT299N60 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FCMT299N60
  • Manufacturer
    onsemi
  • Description
    3.5 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    299 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3.5 V
  • Gate Charge
    39 to 51 nC
  • Power Dissipation
    125 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-4
  • Applications
    Server and Telecom / Server Power Supplies, Solar Inverter

Technical Documents
View details on the manufacturer's website
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