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FCP11N60N

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FCP11N60N Image

The FCP11N60N from onsemi is a MOSFET with Continous Drain Current 10.8 A, Drain Source Resistance 299 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 4 V. Tags: Through Hole. More details for FCP11N60N can be seen below.

Product Specifications

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Product Details

  • Part Number
    FCP11N60N
  • Manufacturer
    onsemi
  • Description
    4 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10.8 A
  • Drain Source Resistance
    299 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    27.4 to 35.6 nC
  • Power Dissipation
    94 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    LCD / LED / PDP TV, Solar Inverter, Telecom, Server Power Supplies, AC-DC Power Supply

Technical Documents
View details on the manufacturer's website
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