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FCPF250N65S3L1-F154

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FCPF250N65S3L1-F154 Image

The FCPF250N65S3L1-F154 from onsemi is a MOSFET with Continous Drain Current 7.6 to 12 A, Drain Source Resistance 210 to 250 milliohm, Drain Source Breakdown Voltage 650 to 700 V, Gate Source Voltage 30 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Through Hole. More details for FCPF250N65S3L1-F154 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FCPF250N65S3L1-F154
  • Manufacturer
    onsemi
  • Description
    30 V, Single, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.6 to 12 A
  • Drain Source Resistance
    210 to 250 milliohm
  • Drain Source Breakdown Voltage
    650 to 700 V
  • Gate Source Voltage
    30 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    24 nC
  • Power Dissipation
    31 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220F
  • Applications
    Computing / Display Power Supplies, Telecom / Server Power Supplies, Industrial Power Supplies, Lighting / Charger / Adapter

Technical Documents
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