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FDA032N08

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FDA032N08 Image

The FDA032N08 from onsemi is a MOSFET with Continous Drain Current 235 A, Drain Source Resistance 3.2 milliohm, Drain Source Breakdown Voltage 75 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4.5 V. Tags: Through Hole. More details for FDA032N08 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDA032N08
  • Manufacturer
    onsemi
  • Description
    75 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    235 A
  • Drain Source Resistance
    3.2 milliohm
  • Drain Source Breakdown Voltage
    75 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4.5 V
  • Gate Charge
    169 to 220 nC
  • Power Dissipation
    375 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-3P-3L
  • Applications
    ATX, Server, Telecome, PSU, Battery protection curcuit, Moter Drives, UPS

Technical Documents
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