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FDA16N50LDTU

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FDA16N50LDTU Image

The FDA16N50LDTU from onsemi is a MOSFET with Continous Drain Current 16.5 A, Drain Source Resistance 380 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 5 V. Tags: Through Hole. More details for FDA16N50LDTU can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDA16N50LDTU
  • Manufacturer
    onsemi
  • Description
    500 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    16.5 A
  • Drain Source Resistance
    380 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    5 V
  • Gate Charge
    32 to 45 nC
  • Power Dissipation
    205 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-3P-3L
  • Applications
    PDP TV, UPS

Technical Documents
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