1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. FDA28N50F

FDA28N50F

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

FDA28N50F Image

The FDA28N50F from onsemi is a MOSFET with Continous Drain Current 28 A, Drain Source Resistance 175 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 5 V. Tags: Through Hole. More details for FDA28N50F can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FDA28N50F
  • Manufacturer
    onsemi
  • Description
    500 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    28 A
  • Drain Source Resistance
    175 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    5 V
  • Gate Charge
    80 to 105 nC
  • Power Dissipation
    310 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-3P-3L
  • Applications
    PDP TV, UPS, AC-DC Power Supply

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products