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FDB045AN08A0-F085

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The FDB045AN08A0-F085 from onsemi is a MOSFET with Continous Drain Current 90 A, Drain Source Resistance 3.9 to 8.4 milli-ohm, Drain Source Breakdown Voltage 75 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for FDB045AN08A0-F085 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDB045AN08A0-F085
  • Manufacturer
    onsemi
  • Description
    75 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    90 A
  • Drain Source Resistance
    3.9 to 8.4 milli-ohm
  • Drain Source Breakdown Voltage
    75 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    92 to 138 nC
  • Power Dissipation
    310 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-263-2AB
  • Applications
    42V Automotive Load Control, Starter / Alternator Systems, Electronic Power Steering Systems, Electronic Valve Train Systems, DC-DC converters and Off-line UPS, Distributed Power Architectures and VRMs, Primary Switch for 24V and 48V systems

Technical Documents
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