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FDB1D7N10CL7

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FDB1D7N10CL7 Image

The FDB1D7N10CL7 from onsemi is a MOSFET with Continous Drain Current 268 A, Drain Source Resistance 1.75 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for FDB1D7N10CL7 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDB1D7N10CL7
  • Manufacturer
    onsemi
  • Description
    100 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    268 A
  • Drain Source Resistance
    1.75 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    74 to 163 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    Industrial Motor Drive, Industrial Power Supplies, Industrial Automation, Battery Protection, Uninterruptible Power Supplies, Energy Inverters, Energy Storage, Load Switch

Technical Documents
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